GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94918
Reference7 articles.
1. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
2. Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement
3. GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement
4. High quality InP grown by molecular beam epitaxy
5. 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
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1. Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus;Le Journal de Physique IV;1999-02
2. Gas-Source Molecular Beam Epitaxy: GaxIn1−xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties;Molecular Beam Epitaxy;1995
3. Chemical beam epitaxy — a child of surface science;Surface Science;1994-01
4. Phosphorus and Hydrogen;P Phosphorus;1993
5. Optoelectronic Devices;Gas Source Molecular Beam Epitaxy;1993
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