Determination of the density of states effective mass and the energy minimum of theX7satellite conduction band in GaAs from theX6→X7absorption spectrum
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103673
Reference20 articles.
1. High‐field transport in GaAs transistors
2. Femtosecond intervalley scattering in GaAs
3. The intervalley X6→Γ6, L6 scattering time in GaAs measured by ultrafast pump-probe infrared absorption spectroscopy
4. Electrical Properties of the GaAsX1CMinima at Low Electric Fields from a High-Pressure Experiment
5. High-temperature carrier transport in n-type epitaxial GaAs
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1. Time-resolved IR-absorption spectroscopy of hot-electron dynamics in satellite and upper conduction bands in GaP;Physical Review B;1995-04-15
2. AlxGa1−xAs intervalley scattering rates from field-assisted photoemission spectroscopy;Physical Review B;1995-02-15
3. Upper satellite conduction band population dynamics in GaAs measured by femtosecond UV pump - IR probe absorption spectroscopy;Ultrafast Phenomena;1994
4. Determination of the critical value ofxcfor the direct-to-indirect band-gap transition inAlxGa1−xAs by measuring hot-carrier dynamics in theXvalley;Physical Review B;1992-12-15
5. Rate equations for the study of femtosecond intervalley scattering in compound semiconductors;Physical Review B;1992-04-15
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