Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1328777
Reference16 articles.
1. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
2. Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100)
3. Critical layer thickness for self-assembled InAs islands on GaAs
4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
5. Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Size Distribution and Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2013-02-01
2. The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors;Journal of Applied Physics;2012-06-15
3. Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth;Journal of Applied Physics;2007-07
4. Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers;Japanese Journal of Applied Physics;2006-01-06
5. In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(001) quantum dots;Journal of Crystal Growth;2005-02
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