Electron trapping during high‐field tunneling injection in metal‐oxide‐silicon capacitors: The effect of gate‐induced strain
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339703
Reference34 articles.
1. Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures
2. Trap generation during low‐fluence avalanche‐electron injection in metal‐oxide‐silicon capacitors
3. Fowler‐Nordheim Tunneling into Thermally Grown SiO2
4. High Field Phenomena in Thermal SiO2
5. Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon
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