Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124618
Reference27 articles.
1. Band‐gap narrowing in ordered and disordered semiconductor alloys
2. Dependence of the optical properties of semiconductor alloys on the degree of long‐range order
3. Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys
4. Growth and characterization of InAs/GaAs monolayer structures
5. Effect of growth rate on the band gap of Ga0.5In0.5P
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