Quantum mechanical solver for confined heterostructure tunnel field-effect transistors-Reference-Cited by-同舟云学术

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Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

Published:2014-02-07 Issue:5 Volume:115 Page:053706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Verreck Devin,Van de Put Maarten,Sorée Bart,Verhulst Anne S.,Magnus Wim,Vandenberghe William G.,Collaert Nadine,Thean Aaron,Groeseneken Guido

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4864128

Reference25 articles.

1. Full quantum mechanical model for the charge distribution and the leakage currents in ultrathin metal–insulator–semiconductor capacitors

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

4. Steep-slope tunnel field-effect transistors using III–V nanowire/Si heterojunction

5. Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

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1. An Accurate and Full-Range Analytical Current Model for Nanowire Heterojunction TFET;IEEE Transactions on Electron Devices;2023-11

2. Ab initio Methods for Electronic Transport in Semiconductors and Nanostructures;Springer Handbook of Semiconductor Devices;2022-11-11

3. Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET;IEEE Journal of the Electron Devices Society;2021

4. High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling;Micromachines;2019-01-24

5. Self-consistent procedure including envelope function normalization for full-zone Schrödinger-Poisson problems with transmitting boundary conditions;Journal of Applied Physics;2018-11-28

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