Abstract
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si source and drain region is proposed, and its electrical characteristics are compared to other TFET structures. From two-dimensional (2-D) device simulation results, it is confirmed that the Si/Ge heterostructure source junction improves Ion and SS characteristics by using the direct band-to-band tunneling current. Furthermore, the proposed structure shows suppressed ambipolar behavior since the Ge/Si heterostructure is used at the drain junction.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference37 articles.
1. The International Technology Roadmap for Semiconductorshttp://www.itrs.net/
2. Device scaling limits of Si MOSFETs and their application dependencies
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