Effects of substrate misorientation on ordering in GaAs0.5P0.5grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103834
Reference18 articles.
1. Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition
2. Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
3. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
4. Sublattice ordering in GaInP and AlGaInP: Effects of substrate orientations
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2. Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
3. Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy;MRS Proceedings;2005
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