Photocurrent deep level transient spectroscopy in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332913
Reference11 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Junction structure effects on constant capacitance DLTS and ODLTS spectra
3. Optical properties of gold acceptor and donor levels in silicon
4. Measurement of minority carrier capture cross sections and application to gold and platinum in silicon
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