High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115785
Reference15 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates;Russian Microelectronics;2023-06
2. Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates;Микроэлектроника;2023-05-01
3. Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates;Nanobiotechnology Reports;2022-12
4. Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy;Journal of Applied Physics;2005-09
5. Electronic parameters and interfacial properties ofGaAs/AlxGa1−xAsmultiquantum wells grown on(111)AGaAs by metalorganic vapor phase epitaxy;Physical Review B;2003-07-10
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