Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1134/S106373972370035X.pdf
Reference12 articles.
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2. Smith D.L. and Mailhiot, C., Theory of semiconductor superlattice electronic structure, Rev. Mod. Phys., 1990, vol. 62, no. 1, pp. 173–234. https://doi.org/10.1103/RevModPhys.62.173
3. Takeuchi, H., Yanagisawa, J., Hasegawa, T., and Nakayama, M., Enhancement of terahertz electromagnetic wave emission from an undoped GaAs/n-type GaAs epitaxial layer structure, Appl. Phys. Lett., 2008, vol. 93, p. 081916. https://doi.org/10.1063/1.2976436
4. Galiev, G.B., Pushkarev, S.S., Buriakov, A.M., Bilyk, V.R., Mishina, E.D., Klimov, E.A., Vasil’evskii, I.S., and Maltsev, P.P., Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates, Semiconductors, 2017, vol. 51, no. 4, pp. 503–508. https://doi.org/10.1134/S1063782617040054
5. Buryakov, A.M., Bilyk, V.R., Mishina, E.D., Galiev, G.B., Klimov, E.A., Maltsev, P.P., and Pushkarev, S.S., Generation of terahertz radiation by low-temperature multilayer epitaxial films of i-LT-GaAs/N-GaAs on GaAs substrates with (100) and (111)A orientations, Nano- Mikrosist. Tekh., 2017, vol. 19, no. 2, pp. 77–84. https://doi.org/10.17587/nmst.19.77-84
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