Evolution of leakage paths in HfO2∕SiO2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1862779
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1. Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy
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3. Investigation of existing defects and defect generation in device-grade SiO[sub 2] by ballistic electron emission spectroscopy
4. Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2Films Using Ballistic Electron Emission Microscopy
5. Conducting atomic force microscopy study of silicon dioxide breakdown
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