Nitrogen passivation of (0001) 4H-SiC silicon-face dangling bonds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2770653
Reference26 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Silicon carbide benefits and advantages for power electronics circuits and systems
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4. Effect of interface states on electron transport in 4H-SiC inversion layers
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