Nitridation effects on Pb center structures at SiO2/Si(100) interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1687034
Reference28 articles.
1. Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
2. Monolayer incorporation of nitrogen at Si–SiO2 interfaces: Interface characterization and electrical properties
3. Correlation of dielectric breakdown with hole transport for ultrathin thermal oxides and N2O oxynitrides
4. Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
5. Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface traps responsible for negative bias temperature instability in a nitrided submicron metal-oxide-semiconductor field effect transistor;Applied Physics Letters;2011-03-07
2. Location, Structure, and Density of States of NBTI-Induced Defects in Plasma Nitrided pMOSFETs;2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual;2007-04
3. Response to “Comment on ‘Nitridation effects on Pb center structures at SiO2∕Si(100) interfaces’ ” [J. Appl. Phys. 95, 4096 (2004)];Journal of Applied Physics;2007-01-15
4. Comment on “Nitridation effects on Pb1 center structures at SiO2∕Si(100) interfaces” [J. Appl. Phys. 95, 4096 (2004)];Journal of Applied Physics;2007-01-15
5. The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors;Journal of Applied Physics;2006-12-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3