Forward voltage drop degradation in diffused SiCp-i-ndiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1687035
Reference18 articles.
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
3. Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes
4. Stacking-fault formation and propagation in 4H-SiC PiN diodes
5. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
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3. Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors;Microelectronics Reliability;2009-01
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