Inelastic tunneling in AlAs‐GaAs‐AlAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100046
Reference8 articles.
1. Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures
2. Tunneling through indirect-gap semiconductor barriers
3. Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition
4. Perpendicular transport across (Al,Ga)As and the Γ to X transition
5. Large room‐temperature effects from resonant tunneling through AlAs barriers
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3. Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAs∕AlAs double barrier structure under elevated hydrostatic pressures;Applied Physics Letters;2005-08-15
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5. Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure;Superlattices and Microstructures;2001-01
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