Perpendicular transport across (Al,Ga)As and the Γ to X transition
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. A GaAs gate heterojunction FET
2. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
3. Resonant Fowler–Nordheim tunneling inn−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitors
4. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors
5. Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy
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