Enhanced optical frequency detection with negative differential resistance in metal‐barrier‐metal point‐contact diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655562
Reference9 articles.
1. Detection of optical and infrared radiation with DC-biased electron-tunneling metal-barrier-metal diodes
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4. Avalanche‐Induced Negative Resistance in Thin Oxide Films
5. Further properties and a suggested model for niobium oxide negative resistance
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1. Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-09
2. Photoresponse characteristics of thin-film nickel-nickel oxide-nickel tunneling junctions;IEEE Journal of Quantum Electronics;1983-04
3. A stimulated inelastic tunneling theory of negative differential resistance in metal-insulator-metal diodes;IEEE Journal of Quantum Electronics;1980-01
4. Theory of Infrared and Optical Frequency Amplification in Metal-Barrier-Metal Diodes;IEEE Transactions on Microwave Theory and Techniques;1979-06
5. IVB-4 surface plasmons and the performance of metal-barrier-metal tunneling junctions at infrared and optical frequencies;IEEE Transactions on Electron Devices;1976-11
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