Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3257732
Reference16 articles.
1. Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devices
2. Implanted noble gas atoms as diffusion markers in silicide formation
3. Kinetics of formation of silicides: A review
4. Towards implementation of a nickel silicide process for CMOS technologies
5. Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’
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