Charge trapping characteristics of the interface states in an AlN/GaAs metal‐insulator‐semiconductor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101642
Reference13 articles.
1. Influence of NH3plasma pretreatment on the properties of plasma‐enhanced chemical‐vapor‐deposited SiON on GaAs interface
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3. Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagrams
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1. c-Axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition;Journal of Crystal Growth;2002-02
2. Low-temperature metalorganic chemical vapour deposition of AlN for surface passivation of GaAs;Advanced Materials for Optics and Electronics;1996-05
3. Low energy ion bombardment effects in gold/aluminum nitride/silicon junctions;Journal of Electronic Materials;1996-01
4. Defects, optical absorption and electron mobility in indium and gallium nitrides;Physica B: Condensed Matter;1993-04
5. Energy distribution of interface state density in AlN/n-GaAs heterostructures formed by laser chemical vapor deposition;Solid-State Electronics;1993-02
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