Influence of NH3plasma pretreatment on the properties of plasma‐enhanced chemical‐vapor‐deposited SiON on GaAs interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337208
Reference24 articles.
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4. GaAs MOS structures with Al2O3 grown by molecular beam reaction under UV excitation
5. Raman scattering from anodic oxide‐GaAs interfaces
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1. Impact of NH3 plasma treatment for solution-processed indium oxide thin-film transistors with low thermal budget;Journal of Alloys and Compounds;2020-03
2. Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD method;Thin Solid Films;1999-04
3. Real time in situ monitoring of surfaces during glow discharge processing: NH3 and H2 plasma passivation of GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
4. NH3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy;Japanese Journal of Applied Physics;1995-02-28
5. Nitridation of GaAs single crystal surfaces using hydrazoic acid and 308 nm photon beams;Surface Science;1994-09
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