Epitaxial growth of AlxGa1−xN on Si(111) via a ZrB2(0001) buffer layer-Reference-Cited by-同舟云学术

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Epitaxial growth of AlxGa1−xN on Si(111) via a ZrB2(0001) buffer layer

Published:2004-05-03 Issue:18 Volume:84 Page:3510-3512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tolle John,Kouvetakis John,Kim Dae-Woo,Mahajan S.,Bell A.,Ponce Fernando A.,Tsong I. S. T.,Kottke Michael L.,Chen Zhihao D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1738944

Reference5 articles.

1. Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

2. Atomic arrangement at the AlN/ZrB2 interface

3. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

4. Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films

5. Growth of crack-free AlGaN film on high-temperature thin AlN interlayer

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1. Identification of a Stable B₂H₂ Intermediate in the Decomposition of Zr(BH₄)₄ on the Pd(111) Surface;The Journal of Physical Chemistry C;2024-07-22

2. Growth and stability of epitaxial zirconium diboride thin films on silicon (111) substrate;Journal of Applied Physics;2023-10-03

3. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017

4. Epitaxial Silicene: Beyond Silicene on Silver Substrates;Silicene;2016

5. Phonon dispersion of silicene on ZrB2(0 0 0 1);Journal of Physics: Condensed Matter;2015-07-07

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