Lattice vacancies in silicon film exposed to external electric field
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816789
Reference43 articles.
1. Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon
2. Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model
3. Interaction of neutral vacancies and interstitials with theSi(001)surface
4. Range-Separated Approach to the RPA Correlation Applied to the van der Waals Bond and to Diffusion of Defects
5. What We Have Learned about Intrinsic Defects in Silicon: A Help in Understanding Diamond?
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1. Polarizing Oxygen Vacancies in Insulating Metal Oxides under a High Electric Field;Physical Review Letters;2017-09-21
2. Erratum: “Lattice vacancies in silicon film exposed to external electric field” [J. Appl. Phys. 114, 043713 (2013)];Journal of Applied Physics;2014-06-21
3. Charge distribution and chemical bonding in B-O complexes in Cz-Si solar cells;Journal of Applied Physics;2013-10-21
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