Charge distribution and chemical bonding in B-O complexes in Cz-Si solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826072
Reference38 articles.
1. H. Fischer and W. Pschunder, in Proceedings of the 10th IEEE Photovoltaic Specialists Conference, Palo Alto, CA (IEEE, New York, 1973), p. 404.
2. Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon
3. Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon
4. Light-induced degradation in compensatedp- andn-type Czochralski silicon wafers
5. Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation;Journal of Physics D: Applied Physics;2021-04-20
2. Separation of boron from silicon by steam-added electron beam melting;Separation and Purification Technology;2019-05
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