Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors-Reference-Cited by-同舟云学术

Quantitative analysis of the density of trap states at the semiconductor-dielectric interface in organic field-effect transistors

Published:2015-09-07 Issue:10 Volume:107 Page:103303
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Diemer Peter J.¹,Lamport Zachary A.¹,Mei Yaochuan¹,Ward Jeremy W.¹,Goetz Katelyn P.¹,Li Wei¹,Payne Marcia M.²,Guthold Martin¹,Anthony John E.²,Jurchescu Oana D.¹

Affiliation:

1. Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109, USA

2. Department of Chemistry, The University of Kentucky, Lexington, Kentucky 40506, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930310

Reference43 articles.

1. Versatile Organic Transistors by Solution Processing

2. Organic thin-film transistors

3. Materials and Applications for Large Area Electronics: Solution-Based Approaches

4. Inkjet printing of organic electronics – comparison of deposition techniques and state-of-the-art developments

5. Tunable Fröhlich polarons in organic single-crystal transistors

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