Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124100
Reference13 articles.
1. Surface reconstruction of zinc‐blende GaN
2. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
3. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
4. Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
5. Observation of MBE-grown and interfaces by high resolution transmission electron microscope
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