Spin-torque switching mechanisms of perpendicular magnetic tunnel junction nanopillars
Author:
Affiliation:
1. Department of Physics, Loyola University New Orleans, New Orleans, Louisiana 70118, USA
2. Center for Quantum Phenomena, Department of Physics, New York University, New York, New York 10003, USA
Funder
Spin Memory Inc.
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0046596
Reference27 articles.
1. A new spin on magnetic memories
2. Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
3. Time-resolved studies of the spin-transfer reversal mechanism in perpendicularly magnetized magnetic tunnel junctions
4. Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions
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1. Temperature-resilient random number generation with stochastic actuated magnetic tunnel junction devices;Applied Physics Letters;2024-01-29
2. Deterministic and stochastic aspects of current-induced magnetization reversal in perpendicular nanomagnets;Physical Review B;2023-06-28
3. Spin-transfer and spin-orbit torques in the Landau–Lifshitz–Gilbert equation;Journal of Physics: Condensed Matter;2022-11-14
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