Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3258488
Reference8 articles.
1. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
2. Origin of efficiency droop in GaN-based light-emitting diodes
3. Performance of High-Power AlInGaN Light Emitting Diodes
4. Auger recombination in InGaN measured by photoluminescence
5. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
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