Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Funder
SSLEEC
SSLP
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4943143
Reference35 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication
3. Comparison between blue lasers and light-emitting diodes for future solid-state lighting
4. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
5. Analysis of lasers as a solution to efficiency droop in solid-state lighting
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