Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4760259
Reference19 articles.
1. Photoinduced write-once read-many-times memory device based on DNA biopolymer nanocomposite
2. High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate
3. Memory effects and carrier transport mechanisms of write-once- read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
4. A Two-Terminal Write-Once-Read-Many-Times-Memory Device Based on an Aluminum Nitride Thin Film Containing Al Nanocrystals
5. Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich $\hbox{Al}_{2}\hbox{O}_{3}$/p-Si Diode
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