Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al 2 O 3 Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing-Reference-Cited by-同舟云学术

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Trap‐Related Nonvolatile Negative Photoconductivity in a Single Ag@Al 2 O 3 Hybrid Nanorod for a Photomemory with Light‐Writing and Bias‐Erasing

Published:2019-09-19 Issue:24 Volume:7 Page:1901154
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Adv. Optical Mater.

Author:

Ji Wenwen¹²,Zhou Huiying³,Ye Yalong¹,Zhao Jie¹,Xiao Yanhe¹,Lei Shuijin¹,Cheng Baochang¹²^ORCID

Affiliation:

1. School of Materials Science and EngineeringNanchang University 999 Xuefu Avenue Nanchang 330031 P. R. China

2. Nanoscale Science and Technology LaboratoryInstitute for Advanced StudyNanchang University 999 Xuefu Avenue Nanchang 330031 P. R. China

3. Computer and Information Engineering SchoolCentral South University of Forestry and Technology Changsha 410004 P. R. China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.201901154

Reference41 articles.

1. Nanostructure and nanomaterial characterization, growth mechanisms, and applications

2. Semiconductor nanowire lasers

3. Nanowire Chemical/Biological Sensors: Status and a Roadmap for the Future

4. Erasable memory properties of spectral selectivity modulated by temperature and bias in an individual CdS nanobelt-based photodetector

5. A surface state-controlled, high-performance, self-powered photovoltaic detector based on an individual SnS nanorod with a symmetrical electrode structure

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