A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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A comprehensive study of boron and carbon diffusion models in SiGeC heterojunction bipolar transistors

Published:2005-09-15 Issue:6 Volume:98 Page:063530
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sibaja-Hernandez Arturo,Decoutere Stefaan,Maes Herman

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2060953

Reference26 articles.

1. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting;Meister T. F.,2003

2. The contribution of vacancies to carbon out-diffusion in silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconstruction of concentration profiles in heterostructures with chemically modified interfaces;Journal of Applied Physics;2018-06-07

2. Structural, electronic, and optical properties of ordered Si1−Ge C alloys: A first principles study;Journal of Alloys and Compounds;2015-05

3. Designing the Si(100) conversion into SiC(100) by Ge;physica status solidi (c);2010-02

4. Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling;Bulletin of the Russian Academy of Sciences: Physics;2010-02

5. Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors;Journal of Applied Physics;2008-06

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