Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824121
Reference27 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
3. Spontaneous ordering of nanostructures on crystal surfaces
4. Structural properties of self-organized semiconductor nanostructures
5. New physics and devices based on self-assembled semiconductor quantum dots
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates;Nanoscale;2023
2. Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate;Nanoscale Research Letters;2017-01-24
3. Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots;Journal of Applied Physics;2016-05-28
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