Valence‐band discontinuities at semiconductor heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348584
Reference37 articles.
1. Experiments on Ge-GaAs heterojunctions
2. Theory of band line-ups
3. Theory of band line-ups
4. Tight-binding theory of heterojunction band lineups and interface dipoles
5. Schottky barriers and semiconductor band structures
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