1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119319
Reference7 articles.
1. Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW
2. High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links
3. 1.3 µm waveguided electroabsorption modulators with strain-compensated InAsP/InGaP MQW structures
4. Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators
5. Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxy
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