Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy-Reference-Cited by-同舟云学术

Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

Published:1986-04-15 Issue:8 Volume:59 Page:2828-2832
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zemon S.,Norris P.,Koteles E. S.,Lambert G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.336937

Reference12 articles.

1. The incorporation and characterisation of acceptors in epitaxial GaAs

2. Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs

3. Low‐temperature photoluminescence properties of high‐quality GaAs layers grown by molecular‐beam epitaxy

4. Low‐temperature photoluminescence properties of high‐quality GaAs layers grown by molecular‐beam epitaxy

5. New aspects of the magnetoluminescence of a band to acceptor transition in GaAs

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