InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells-Reference-Cited by-同舟云学术

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Published:2014-09-07 Issue:9 Volume:116 Page:093511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jakomin R.,Kawabata R. M. S.,Mourão R. T.,Micha D. N.,Pires M. P.,Xie H.,Fischer A. M.,Ponce F. A.,Souza P. L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894295

Reference27 articles.

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4. K. Sears , J. Wong-Leung , M. Buda , H. H. Tan , and C. Jagadish , in 2006 International Conference on Nanoscience and Nanotechnology (2006), Vol. 1–2, p. 578.

5. Ripening of self-organized InAs quantum dots

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