A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques-Reference-Cited by-同舟云学术

A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques

Published:2009-11 Issue:9 Volume:106 Page:093524
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zaumseil P.,Schroeder T.,Park Ji-Soo,Fiorenza J. G.,Lochtefeld A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3257265

Reference38 articles.

1. Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

2. MBE growth of SiGe with high Ge content for optical applications

3. Introduction

4. Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy

5. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

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