Anisotropic etching of β-Ga2O3 using hot phosphoric acid
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Defense Threat Reduction Agency
Office of Naval Research
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5093188
Reference44 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Recent progress in Ga2O3power devices
3. Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
4. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
5. Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications
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