Control of dislocation morphology and lattice distortion in Na-flux GaN crystals-Reference-Cited by-同舟云学术

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Control of dislocation morphology and lattice distortion in Na-flux GaN crystals

Published:2017-09-14 Issue:10 Volume:122 Page:105303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Takeuchi S.¹^ORCID,Mizuta Y.¹,Imanishi M.²,Imade M.²,Mori Y.²,Sumitani K.³,Imai Y.³,Kimura S.³^ORCID,Sakai A.¹^ORCID

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

2. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

3. Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

1. Bulk GaN crystals grown by HVPE

2. Growth and strain characterization of high quality GaN crystal by HVPE

3. Mosaic structure in epitaxial thin films having large lattice mismatch

4. Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

5. Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reducing GaN crystal dislocations through lateral growth on uneven seed crystal surfaces using the Na-flux method;Japanese Journal of Applied Physics;2023-10-01

2. X-ray diffraction analysis and X-ray topography of high-quality ScAlMgO4 substrates;Journal of Crystal Growth;2021-11

3. Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment;Current Applied Physics;2020-02

4. Gallium nitride;Single Crystals of Electronic Materials;2019

5. Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE;Scientific Reports;2018-05-18

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