Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
2. Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
Funder
Svenska Forskningsrådet Formas (Swedish Research Council Formas)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4989648
Reference33 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. SiC devices: physics and numerical simulation
3. High performance of high-voltage 4H-SiC Schottky barrier diodes
4. Nitrogen donors in 4H‐silicon carbide
5. Free electron density and mobility in high-quality 4H–SiC
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4. Systematic variation of photoluminescence spectra with donor and acceptor concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in Si;Japanese Journal of Applied Physics;2022-07-19
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