V‐grooved inner‐stripe laser diodes on ap‐type substrate operating over 100 mW at 1.5 μm wavelength
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98203
Reference5 articles.
1. Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operation
2. High-power 1.3-µm InGaAsP P-substrate buried crescent lasers
3. The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasers
4. Low temperature liquid phase epitaxy growth for room‐temperature cw operation of 1.55‐μm InGaAsP/InP double‐heterostructure laser
5. High power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate
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1. GaAs side-by-side direct wafer bonding and formation of lateral pn junction;Applied Surface Science;1997-06
2. Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers;IEEE Journal of Quantum Electronics;1994
3. Fabrication and characterization of erbium-doped silica single-mode fibers;Electronics and Communications in Japan (Part II: Electronics);1992
4. Injection locking of a highly coherent and high-power diode laser at 15 μm;Optics Letters;1991-10-15
5. High-power and high-frequency operation of InGaAsP/InP lasers at 1.3 μm;Fiber and Integrated Optics;1990-10
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