Low temperature liquid phase epitaxy growth for room‐temperature cw operation of 1.55‐μm InGaAsP/InP double‐heterostructure laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91473
Reference7 articles.
1. Ultimate low-loss single-mode fibre at 1.55 μm
2. InP‐GaxIn1−xAsyP1−ydouble heterostructure for 1.5 μm wavelength
3. In0.53Ga0.47As/In1-xGaxAsyP1-yDouble Heterostructure Lasers with Emission Wavelength of 1.67 µm at Room Temperature
4. Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µm
5. 1.67 µm Ga0.47In0.53As/InP DH Lasers Double Cladded with InP by LPE Technique
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Liquid-phase epitaxial growth of InGaP for red electroluminescent devices;Solid-State Electronics;1991-08
2. Interface abruptness and LED performance of the AlGaAs/InGaP single heterostructure grown by liquid-phase epitaxy;Journal of Crystal Growth;1991-07
3. 1.5 μm InGaAsP/InP buried crescent superluminescent diode on ap‐InP substrate;Applied Physics Letters;1990-06-18
4. Active Layer Thickness Measurement System For Double Heterostructure Laser Wafers;Optical Engineering;1989-01-01
5. LPE growth of InP/InGaAsP/InGaAs/InP heterostructure at normal cooling rate at 630°C;Journal of Crystal Growth;1988-02
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