Luminescence of GaAs Grown in Oxygen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1729176
Reference5 articles.
1. On the Preparation of High Purity Gallium Arsenide
2. Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth
3. Recombination Radiation in GaAs
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1. Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma;Japanese Journal of Applied Physics;2002-09-15
2. Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process;Japanese Journal of Applied Physics;2001-09-15
3. Deep‐center oxygen‐related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy;Journal of Applied Physics;1995-08
4. The effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor‐phase epitaxy GaAs:O;Journal of Applied Physics;1994-07-15
5. Cathodoluminescence of copper-doped GaAs and its relation to EL2 centres;physica status solidi (b);1992-12-01
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