Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3639281
Reference20 articles.
1. Monte Carlo study of electron transport in silicon inversion layers
2. Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
3. Monte Carlo Device Simulation
4. A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
5. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
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