Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography-Reference-Cited by-同舟云学术

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

Published:2018-08 Issue:8 Volume:8 Page:085205
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Srocka N.¹,Musiał A.²,Schneider P.-I.³,Mrowiński P.²,Holewa P.²,Burger S.³⁴^ORCID,Quandt D.¹^ORCID,Strittmatter A.¹^ORCID,Rodt S.¹,Reitzenstein S.¹^ORCID,Sęk G.²

Affiliation:

1. Institute of Solid State Physics, Technical University of Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany

2. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

3. JCMwave GmbH, Bolivarallee 22, D-14050 Berlin, Germany

4. Zuse Institute Berlin, Takustraße 7, D-14195 Berlin, Germany

Funder

German Research Foundation

National Center for Research and Development

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5038137

Reference59 articles.