Terahertz photomixing in high energy oxygen- and nitrogen-ion-implanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753738
Reference12 articles.
1. High resistivity annealed low-temperature GaAs with 100 fs lifetimes
2. Formation of As precipitates in GaAs by ion implantation and thermal annealing
3. Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low‐temperature GaAs for optoelectronic applications
4. THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas
5. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors
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