Surface Fermi level position of hydrogen passivated Si(111) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115941
Reference17 articles.
Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfaces;The Journal of Physical Chemistry C;2018-02-06
2. Electronic properties of hydrogen terminated n-Si (111)/electrolyte interface: Effect of saccharin addition;Journal of Electroanalytical Chemistry;2017-10
3. Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis;Microelectronic Engineering;2017-06
4. Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopy;Applied Physics Letters;2016-08
5. Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates;The Journal of Physical Chemistry C;2016-05-09
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