Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes-Reference-Cited by-同舟云学术

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Published:2012-03-15 Issue:6 Volume:111 Page:063102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Anopchenko A.,Tengattini A.,Marconi A.,Prtljaga N.,Ramírez J. M.,Jambois O.,Berencén Y.,Navarro-Urrios D.,Garrido B.,Milesi F.,Colonna J.-P.,Fedeli J.-M.,Pavesi L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3694680

Reference27 articles.

1. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

2. Erbium-doped integrated waveguide amplifiers and lasers

3. Si-based materials and devices for light emission in silicon

4. Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices

5. Design and Electro-Optical Characterization of Si-Based Resonant Cavity Light Emitting Devices

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