Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO-Reference-Cited by-同舟云学术

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Cathodoluminescence study of electric field induced migration of defects in single crystal m-plane ZnO

Published:2020-02-24 Issue:8 Volume:127 Page:085705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Manyam Jedsada¹^ORCID,Ton-That Cuong²^ORCID,Phillips Matthew R.²^ORCID

Affiliation:

1. National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency (NSTDA), Pathum Thani 12120, Thailand

2. School of Mathematical and Physical Sciences, University of Technology Sydney, PO Box 123, Broadway, NSW 2007, Australia

Funder

National Science and Technology Development Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134555

Reference43 articles.

1. Native point defects in ZnO

2. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

3. Electrical degradation of double-Schottky barrier in ZnO varistors

4. Highly stable resistive switching on monocrystalline ZnO

5. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects in Semiconductors;Journal of Applied Physics;2020-05-21

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